Skip to menu
Skip to additional information


The central interest of our research group is to employ highest-purity molecular beam epitaxial (MBE) growth to gain insights into the physics of correlated electrons in systems of reduced dimensionality. In order to provide As- and Sb-based III/V compound semiconductor heterostructures of excellent quality we focus on instrumental improvements of the MBE systems, optimization of the growth parameters as well as on the development of structural designs tailored to the different experimental requirements.

For more details, see the individual project pages in the menu on the left.